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Optical characteristics of 1.55µm GaInNAs multiple quantum wells

Sun, H.D. and Clark, A.H. and Liu, H.Y. and Hopkinson, M. and Calvez, S. and Dawson, M.D. (2004) Optical characteristics of 1.55µm GaInNAs multiple quantum wells. Applied Physics Letters, 85 (18). pp. 4013-4015. ISSN 0003-6951

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Abstract

We report the optical characterization of high-quality 1.55 µm GaxIn1-xNyAs1-y multiquantum wells (MQWs), grown on GaAs with Ga(In)N0.01As spacer layers. The transitions between the quantized QW states of the electrons and holes have been identified using photoluminescence excitation spectroscopy. Their energies are consistent with theoretical fitting based on the band anticrossing model. It is also confirmed by detailed spectroscopic measurements that the addition of even a small amount of In to GaN0.01As barriers remarkably improves the optical characteristics of the QWs. The results imply that although strain-compensated GaInNAs MQWs provide a feasible approach to realizing 1.55 µm optical emission, the relative lattice mismatch between the wells and barriers is critical to the optical quality of the related QWs.

Item type: Article
ID code: 5086
Keywords: low nitrogen-content, laser-diodes, multiquantum wells, conduction-band, beam epitaxy, alloys, strain, range, nonparabolicity, Physics
Subjects: Science > Physics
Department: Faculty of Science > Institute of Photonics
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Depositing user: Strathprints Administrator
Date Deposited: 07 Jan 2008
Last modified: 16 Jul 2013 20:04
URI: http://strathprints.strath.ac.uk/id/eprint/5086

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