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Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers

Clark, A.H. and Calvez, S. and Laurand, N. and Macaluso, R. and Sun, H.D. and Dawson, M.D. and Jouhti, T. and Kontinnen, J. and Pessa, M. (2004) Long-wavelength monolithic GaInNAs vertical-cavity optical amplifiers. IEEE Journal of Quantum Electronics, 40 (7). 878 -883. ISSN 0018-9197

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We report on the continuous-wave amplification characteristics of an optically pumped 1.3-/spl mu/m multiple-quantum-well GaInNAs-GaAs vertical-cavity semiconductor optical amplifier (VCSOA). The VCSOA structure was monolithically grown by molecular beam epitaxy and operated in reflection mode in a fiber-coupled system. The maximum on-chip gain attained, limited by the onset of laser action, was 15.6 dB at 196 mW of 980-nm pump power. For a chip gain of 10.4 dB, the optical bandwidth was 10.8 GHz and the saturation output power was -9 dBm. By varying the pump laser power, a maximum extinction ratio of 22.3 dB was obtained. Temperature-controlled tuneable operation of the device is also presented and demonstration of 9 dB of chip gain obtained over 9.5 nm with an optical bandwidth of 12 GHz is reported.