Chinnam, Krishna Chytanya and Gleskova, Helena (2013) Effect of heat treatment in aluminium oxide preparation by UV/ozone oxidation for organic thin-film transistors. Journal of Nanoscience and Nanotechnology, 13 (7). pp. 5182-5185. ISSN 1533-4880Full text not available in this repository. (Request a copy from the Strathclyde author)
Effect of heat treatment in aluminium oxide (AlOx) preparation employing UV/ozone exposure of thermally-evaporated aluminium is reported. AlOx is combined with 1-octylphosphonic acid to form a gate dielectric in low-voltage organic thin-film transistors based on pentacene. 100°C-heating step that immediately follows UV/ozone oxidation of aluminium leads to a decrease in the transistor threshold voltage of up to 8% and a reduction in the gate dielectric current density for shorter UV/ozone exposure times. Transistors with AlOx prepared by 60-minute UV/ozone oxidation do not exhibit this effect. These results are explained in terms of reduced number of charged oxygen vacancies in the UV/ozone oxidized AlOx.
|Keywords:||heat treatment, aluminium oxide preparation, UV/ozone oxidation, thin-film transistors, organic, Electrical engineering. Electronics Nuclear engineering, Electrical and Electronic Engineering|
|Subjects:||Technology > Electrical engineering. Electronics Nuclear engineering|
|Department:||Faculty of Engineering > Electronic and Electrical Engineering|
|Depositing user:||Pure Administrator|
|Date Deposited:||01 Oct 2013 13:01|
|Last modified:||22 Mar 2017 12:09|