Picture of person typing on laptop with programming code visible on the laptop screen

World class computing and information science research at Strathclyde...

The Strathprints institutional repository is a digital archive of University of Strathclyde's Open Access research outputs. Strathprints provides access to thousands of Open Access research papers by University of Strathclyde researchers, including by researchers from the Department of Computer & Information Sciences involved in mathematically structured programming, similarity and metric search, computer security, software systems, combinatronics and digital health.

The Department also includes the iSchool Research Group, which performs leading research into socio-technical phenomena and topics such as information retrieval and information seeking behaviour.

Explore

Effect of heat treatment in aluminium oxide preparation by UV/ozone oxidation for organic thin-film transistors

Chinnam, Krishna Chytanya and Gleskova, Helena (2013) Effect of heat treatment in aluminium oxide preparation by UV/ozone oxidation for organic thin-film transistors. Journal of Nanoscience and Nanotechnology, 13 (7). pp. 5182-5185. ISSN 1533-4880

Full text not available in this repository. Request a copy from the Strathclyde author

Abstract

Effect of heat treatment in aluminium oxide (AlOx) preparation employing UV/ozone exposure of thermally-evaporated aluminium is reported. AlOx is combined with 1-octylphosphonic acid to form a gate dielectric in low-voltage organic thin-film transistors based on pentacene. 100°C-heating step that immediately follows UV/ozone oxidation of aluminium leads to a decrease in the transistor threshold voltage of up to 8% and a reduction in the gate dielectric current density for shorter UV/ozone exposure times. Transistors with AlOx prepared by 60-minute UV/ozone oxidation do not exhibit this effect. These results are explained in terms of reduced number of charged oxygen vacancies in the UV/ozone oxidized AlOx.