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Second harmonic generation in the characterisation of epitaxial CdxHg1-xTe (CMT) (111) surfaces

Berlouis, L.E.A. and Wark, A.W. and Cruickshank, F.R. and Antoine, R. and Galletto, P. and Brevet, Pierre-Francois and Girault, H.H. and Gupta, S.C. and Chavada, F.R. and Garg, A.K. (1998) Second harmonic generation in the characterisation of epitaxial CdxHg1-xTe (CMT) (111) surfaces. Journal of Crystal Growth, 184-185. pp. 691-695. ISSN 0022-0248

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Abstract

Second-harmonic (SH) rotation anisotropy measurements have been performed for the first time on epitaxial CMT layers grown on CdTe〈1 1 1〉 B substrate. The CMT response shows a strong surface contribution to the SH signal. This modification of the SH response from a non-centrosymmetric II–VI material has not been previously reported since bulk SH generation has always been considered as the dominant contributor in these instances. The difference in the case of the CMT however is that the observed SH signal orginates from, at most, only the top 30 nm of the CMT epilayer.