Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope

Naresh Kumar, G. and Mauder, C and Wang, K.R. and Kraeusel, Simon and Bruckbauer, Jochen and Edwards, P. R. and Hourahine, Benjamin and Kalisch, H. and Vescan, A. and Giesen, C. and Heuken, M and Trampert, A. and Day, A.P. and Trager-Cowan, Carol (2013) Electron channeling contrast imaging studies of nonpolar nitrides using a scanning electron microscope. Applied Physics Letters, 102 (14). 142103. ISSN 0003-6951 (https://doi.org/10.1063/1.4801469)

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Abstract

Threading dislocations, stacking faults, and associated partial dislocations significantly degrade the optical and electrical properties of materials such as non-polar III-nitride semiconductor thin films. Stacking faults are generally difficult to detect and quantify with existing characterization techniques. We demonstrate the use of electron channeling contrast imaging in the scanning electron microscope to non-destructively reveal basal plane stacking faults terminated by partial dislocations in m-plane GaN and InGaN/GaN multiple quantum well structures grown on γ-LiAlO2 by metal organic vapor phase epitaxy.

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