Laurand, N. and Calvez, S. and Sun, H.D. and Dawson, M.D. and Gupta, J.A. and Aers, G.C. (2006) C-band emission from GaInNAsSbVCSEL on GaAS. Electronics Letters, 42 (1). pp. 29-30. ISSN 0013-5194Full text not available in this repository. (Request a copy from the Strathclyde author)
The 1.55 /spl mu/m pulsed operation of an optically-pumped GaInNAsSb vertical-cavity surface-emitting laser (VCSEL) is reported. The structure employs a dielectric (SiO/sub 2//TiO/sub 2/) top mirror, while the bottom mirror and active region were grown on GaAs by MBE. Temperature-dependent (10-40/spl deg/C) laser measurements were made for an as-grown sample and an annealed sample, both having a room-temperature lasing wavelength of 1547 nm. Results indicate an annealing-induced blue-shift of the gain peak.
|Keywords:||optics, photonics, lasers, Optics. Light, Electrical and Electronic Engineering|
|Subjects:||Science > Physics > Optics. Light|
|Department:||Faculty of Science > Institute of Photonics|
|Depositing user:||Strathprints Administrator|
|Date Deposited:||05 Sep 2007|
|Last modified:||29 Apr 2016 08:29|