Strathprints Home | Open Access | Browse | Search | User area | Copyright | Help | Library Home | SUPrimo

C-band emission from GaInNAsSbVCSEL on GaAS

Laurand, N. and Calvez, S. and Sun, H.D. and Dawson, M.D. and Gupta, J.A. and Aers, G.C. (2006) C-band emission from GaInNAsSbVCSEL on GaAS. Electronics Letters, 42 (1). pp. 29-30. ISSN 0013-5194

Full text not available in this repository. (Request a copy from the Strathclyde author)

Abstract

The 1.55 /spl mu/m pulsed operation of an optically-pumped GaInNAsSb vertical-cavity surface-emitting laser (VCSEL) is reported. The structure employs a dielectric (SiO/sub 2//TiO/sub 2/) top mirror, while the bottom mirror and active region were grown on GaAs by MBE. Temperature-dependent (10-40/spl deg/C) laser measurements were made for an as-grown sample and an annealed sample, both having a room-temperature lasing wavelength of 1547 nm. Results indicate an annealing-induced blue-shift of the gain peak.

Item type: Article
ID code: 4218
Keywords: optics, photonics, lasers, Optics. Light
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 05 Sep 2007
    Last modified: 16 Jul 2013 20:39
    URI: http://strathprints.strath.ac.uk/id/eprint/4218

    Actions (login required)

    View Item