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GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses

Choi, H.W. and Liu, C. and Gu, E. and McConnell, G. and Girkin, J.M. and Watson, I.M. and Dawson, M.D. (2004) GaN micro-light-emitting diode arrays with monolithically integrated sapphire microlenses. Applied Physics Letters, 84 (13). pp. 2253-2255. ISSN 0003-6951

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Abstract

GaN micro-light-emitting diodes (micro-LEDs) with monolithically integrated microlenses have been demonstrated. Microlenses, with a focal length of 44 µm and a root mean square roughness of ~1 nm, have been fabricated on the polished back surface of a sapphire substrate of an array of micro-LEDs by resist thermal reflow and plasma etching. The optical properties of the microlenses have been demonstrated to alter the emission pattern of the LED emitters. The cone of light emitted from this hybrid device is significantly less divergent than a conventional broad-area device. This combination of micro-LED and microlens technologies offers the potential for further improvement in the overall efficiency of GaN-based light emitters.

Item type: Article
ID code: 4209
Keywords: optics, photonics, microlenses, applied physics, quantum electronics, lasers, Optics. Light, Physics and Astronomy (miscellaneous)
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Faculty of Science > Strathclyde Institute of Pharmacy and Biomedical Sciences
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 07 Sep 2007
    Last modified: 04 Sep 2014 15:49
    URI: http://strathprints.strath.ac.uk/id/eprint/4209

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