Tian, P. F. and Xie, E. Y. and Gong, Z. and Chen, Z. Z. and Yu, T. J. and Sun, Y. J. and Qi, S. L. and Chen, Y. J. and Zhang, Y. F. and Calvez, S. and Gu, Erdan and Zhang, Guoyi and Dawson, Martin (2011) Flexible vertical structure GaN-based light emitting diodes on an AuSn substrate. [Proceedings Paper]Full text not available in this repository. (Request a copy from the Strathclyde author)
By combining the metal bonding/debonding and laser lift off techniques, a new approach to fabricating flexible vertical structure GaN-based light emitting diodes (F-LEDs) has been developed. The performance of these F-LEDs under different bending radii was investigated in detail.
|Item type:||Proceedings Paper|
|Keywords:||GaN, AuSn, vertical structure LEDs, LEDS, flexible optoelectronics, bonding, Substrates , Optical imaging , optical device fabrication, light emitting diodes , gold, flexible vertical structure , GaN-based light emitting diodes , Physics|
|Subjects:||Science > Physics|
|Department:||Faculty of Science > Physics|
Faculty of Science > Institute of Photonics
Faculty of Engineering > Electronic and Electrical Engineering
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|Depositing user:||Pure Administrator|
|Date Deposited:||14 Nov 2012 14:26|
|Last modified:||12 Jun 2013 16:13|
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