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GaInNAs(Sb) for solid-state laser engineering

Calvez, S. (2011) GaInNAs(Sb) for solid-state laser engineering. [Proceedings Paper]

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Abstract

Since their introduction, GaInNAs(Sb) alloys have enabled the extension of the operation of GaAs-based devices to the application-rich wavelength band ranging from 1100 to 1700 nm. In this article, we review our recent advances in the development of dilute nitride components whose prime application is aimed at the development of more advanced solid-state lasers. In particular, we present Vertical (External) Cavity Surface Emitting Lasers also known as Semiconductor Disk Lasers and their use as pump sources for thulium-doped lasers, Raman fibre amplification or as compact sources for yellow/red emission. We will also show that GaInNAsSb Semiconductor Saturable Absorber Mirrors (SESAMs) can be effective elements to trigger and maintain pico/femtosecond pulse operation in mode-locked solid-state lasers. Finally, we will introduce methods exploiting the above-mentioned SESAMs to control the regime of operation of ultrafast lasers.

Item type: Proceedings Paper
ID code: 41636
Keywords: saturable absorber, mu-m, generation, modelocking, lasers, semiconductor disk lasers, GaInNAsSb, SESAM, Electrical engineering. Electronics Nuclear engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 22 Oct 2012 17:00
    Last modified: 17 Jul 2013 14:14
    URI: http://strathprints.strath.ac.uk/id/eprint/41636

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