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Design and simulation of next-generation high-power, high-brightness laser diodes

Lim, Jun and Sujecki, Slawomir and Lang, Lei and Zhang, Zhichao and Paboeuf, David and Pauliat, Gilles and Lucas-Leclin, Gaëlle and Georges, Patrick and MacKenzie, Roderick C. I. and Bream, Philip and Bull, Stephen and Hasler, Karl-Heinz and Sumpf, Bernd and Wenzel, Hans and Erbert, Götz and Thestrup, Birgitte and Petersen, Paul Michael and Michel, Nicolas and Krakowski, Michel and Larkins, Eric (2009) Design and simulation of next-generation high-power, high-brightness laser diodes. IEEE Journal of Selected Topics in Quantum Electronics, 15 (3). pp. 993-1008. ISSN 1077-260X

Full text not available in this repository. (Request a copy from the Strathclyde author)

Abstract

High-brightness laser diode technology is progressing rapidly in response to competitive and evolving markets. The large volume resonators required for high-power, high-brightness operation makes their beam parameters and brightness sensitive to thermal- and carrier-induced lensing and also to multimode operation. Power and beam quality are no longer the only concerns for the design of high-brightness lasers. The increased demand for these technologies is accompanied by new performance requirements, including a wider range of wavelengths, direct electrical modulation, spectral purity and stability, and phase-locking techniques for coherent beam combining. This paper explores some of the next-generation technologies being pursued, while illustrating the growing importance of simulation and design tools. The paper begins by investigating the brightness limitations of broad-area laser diodes, including the use of asymmetric feedback to improve the modal discrimination. Next, tapered lasers are considered, with an emphasis on emerging device technologies for applications requiring electrical modulation and high spectral brightness.