Gurney, William and Orton, J.W. (1974) New techniques for the study of Gunn diode contacts. Solid State Electronics, 17 (7). pp. 743-750. ISSN 0038-1101Full text not available in this repository. Request a copy from the Strathclyde author
Measurements are reported which provide direct evidence of the relationship between the frequency-temperature behaviour of GaAs and InP Gunn diodes and the quality of their cathode contacts. The technique used consists of damaging the cathode contact in a controlled manner while monitoring the current-voltage characteristic and df/dT. These results are compared with computer simulations of I-V characteristics and RF performance using a model diode with a region of either reduced carrier concentration or reduced mobility immediately beneath the contact. Qualitative agreement is obtained between theory and experiment. Magnetoresistance measurements on diodes both before and after damage are analysed to show that the damaged contact region contains both reduced carrier concentration and reduced mobility. Computer simulation using an appropriate model predicts I-V characteristics in general agreement with experimental observations.
|Keywords:||measurements, Gunn diodes , Probabilities. Mathematical statistics, Materials Chemistry, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Condensed Matter Physics|
|Subjects:||Science > Mathematics > Probabilities. Mathematical statistics|
|Department:||Faculty of Science > Mathematics and Statistics|
|Depositing user:||Pure Administrator|
|Date Deposited:||15 Oct 2012 11:59|
|Last modified:||22 Mar 2017 12:21|