Davies, R. and Gurney, William and Mircea, A. (1972) Frequency/temperature characteristics of Gunn devices. Electronics Letters, 8 (14). pp. 349-351. ISSN 0013-5194Full text not available in this repository. (Request a copy from the Strathclyde author)
The variability and large magnitude of the frequency/temperature coefficient of Gunn oscillators has limited the application of these devices. The letter outlines a program of experiments and computer simulations aimed at achieving an understanding of the basic Â¿f/Â¿T mechanism and thus producing a deep stable oscillator. Our simulations successfully predict observed trends in the Â¿f/Â¿T behaviour of Gunn devices with both alloyed metal and n+ regrown contacts. The results of our study show that stable oscillators with a small loaded Q factor and near maximum power output are realisable.
|Keywords:||Gunn devices, frequency stability, thermal effects , computer simulations, Electrical engineering. Electronics Nuclear engineering, Electrical and Electronic Engineering|
|Subjects:||Technology > Electrical engineering. Electronics Nuclear engineering|
|Department:||Faculty of Science > Mathematics and Statistics|
|Depositing user:||Pure Administrator|
|Date Deposited:||15 Oct 2012 11:59|
|Last modified:||03 Jan 2017 01:05|