Novikov, S. V. and Staddon, C. R. and Luckert, F. and Edwards, P. R. and Martin, R. W. and Kent, A. J. and Foxon, C. T. (2012) Zinc-blende and wurtzite AlxGa1-xN bulk crystals grown by molecular beam epitaxy. Journal of Crystal Growth, 350 (1). pp. 80-84. ISSN 0022-0248
JCG_350_80_Novikov_Zb_W_AlGaN.pdf - Published Version
Available under License Unspecified.
Download (270kB) | Preview
There is a significant difference in the lattice parameters of GaN and AlN and for many device applications AlxGa1-xN substrates would be preferable to either GaN or AlN. We have studied the growth of free-standing zinc-blende and wurtzite AlxGa1-xN bulk crystals by plasma-assisted molecular beam epitaxy (PA-MBE). Thick (similar to 10 mu m) zinc-blende and wurtzite AlxGa1-xN films were grown by PA-MBE on 2-in. GaAs (0 0 1) and GaAs (1 1 1)B substrates respectively and were removed from the GaAs substrate after the growth. We demonstrate that free-standing zinc-blende and wurtzite AlxGa1-xN wafers can be achieved by PA-MBE for a wide range of Al compositions. (C) 2011 Elsevier B.V. All rights reserved.
|Keywords:||zinc-blende , AlxGa1-xN, wurtzite , bulk crystals , molecular beam epitaxy , substrates , semiconducting III-V materials, nitrides, Physics, Materials Chemistry, Inorganic Chemistry, Condensed Matter Physics|
|Subjects:||Science > Physics|
|Department:||Faculty of Science > Physics
Technology and Innovation Centre > Bionanotechnology
Technology and Innovation Centre > Photonics
|Depositing user:||Pure Administrator|
|Date Deposited:||13 Aug 2012 14:20|
|Last modified:||15 Apr 2015 08:59|
Actions (login required)