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Characterization of InGaN and InAlN epilayers by microdiffraction X-Ray reciprocal space mapping

Kachkanov, V. and Dolbnya, I. P. and O'Donnell, K. P. and Lorenz, K. and Pereira, S. and Martin, R. W. and Edwards, P. R. and Watson, I. M. (2012) Characterization of InGaN and InAlN epilayers by microdiffraction X-Ray reciprocal space mapping. MRS Online Proceedings Library, 1396.

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    Abstract

    We report a study of InGaN and InAlN epilayers grown on GaN/Sapphire substrates by microfocused three-dimensional X-ray Reciprocal Space Mapping (RSM). The analysis of the full volume of reciprocal space, while probing samples on the microscale with a focused X-ray beam, allows us to gain uniquely valuable information about the microstructure of III-N alloy epilayers. It is found that “seed” InGaN mosaic nanocrystallites are twisted with respect to the ensemble average and strain free. This indicates that the growth of InGaN epilayers follows the Volmer-Weber mechanism with nucleation of “seeds” on strain fields generated by the a-type dislocations which are responsible for the twist of underlying GaN mosaic blocks. In the case of InAlN epilayer formation of composition gradient was observed at the beginning of the epitaxial growth.

    Item type: Article
    ID code: 40397
    Keywords: microstructure, nitride, x-ray diffraction (XRD), Physics, Mechanics of Materials, Materials Science(all), Mechanical Engineering, Condensed Matter Physics
    Subjects: Science > Physics
    Department: Faculty of Science > Physics
    Technology and Innovation Centre > Bionanotechnology
    Technology and Innovation Centre > Photonics
    Faculty of Science > Institute of Photonics
    Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 11 Jul 2012 15:03
    Last modified: 29 Jul 2014 15:24
    URI: http://strathprints.strath.ac.uk/id/eprint/40397

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