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High precision determination of the InN content of Al1-xInxN thin films by Rutherford backscattering spectrometry

Magalhaes, S. and Barradas, N. P. and Alves, E. and Watson, I. M. and Lorenz, K. (2012) High precision determination of the InN content of Al1-xInxN thin films by Rutherford backscattering spectrometry. [Proceedings Paper]

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Abstract

n this work a careful manual analysis of Rutherford backscattering spectrometry spectra is discussed to determine the InN content of Al1−xInxN thin films grown on GaN buffer layers. The main source of error arises from the fact that the low signal of Al is superimposed to the high signal of Ga from the GaN buffer layer. The uncertainties in the derived InN fraction are discussed. Furthermore, it is shown that channelling effects only have a minor influence on the compositional analysis of the studied films although they can significantly reduce the count rate and distort the shape of the spectra.

Item type: Proceedings Paper
ID code: 40287
Keywords: Rutherford backscattering spectrometry, AlInN, Composition analysis, backscattering spectrometry, photonics, Optics. Light, Instrumentation, Nuclear and High Energy Physics
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Technology and Innovation Centre > Photonics
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Depositing user: Pure Administrator
Date Deposited: 02 Jul 2012 10:50
Last modified: 27 Mar 2014 10:14
URI: http://strathprints.strath.ac.uk/id/eprint/40287

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