Yong, J.C.L. and Rorison, J.M. and Othman, M. and Sun, H.D. and Dawson, M.D. and Williams, K.A. (2003) Simulation of gain and modulation bandwidths of 1300nm RWG InGaAsN lasers. IEE Proceedings Optoelectronics, 150 (1). pp. 80-82. ISSN 1350-2433
Full text not available in this repository. (Request a copy from the Strathclyde author)Official URL: http://dx.doi.org/10.1049/ip-opt:20030048
Abstract
The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 µm MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.
| Item type: | Article |
|---|---|
| ID code: | 4011 |
| Keywords: | simulation, gain, modulation, bandwidths, InGaAsN lasers, Commerce, Electrical engineering. Electronics Nuclear engineering |
| Subjects: | Social Sciences > Commerce Technology > Electrical engineering. Electronics Nuclear engineering |
| Department: | Faculty of Science > Institute of Photonics |
| Related URLs: | |
| Depositing user: | Strathprints Administrator |
| Date Deposited: | 25 Aug 2007 |
| Last modified: | 04 Oct 2012 12:08 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/4011 |
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