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Simulation of gain and modulation bandwidths of 1300nm RWG InGaAsN lasers

Yong, J.C.L. and Rorison, J.M. and Othman, M. and Sun, H.D. and Dawson, M.D. and Williams, K.A. (2003) Simulation of gain and modulation bandwidths of 1300nm RWG InGaAsN lasers. IEE Proceedings Optoelectronics, 150 (1). pp. 80-82. ISSN 1350-2433

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Abstract

The gain and dynamic behaviour of InGaAsN quantum well (QW) lasers is investigated. A comparison of simulated material gain of 1300 nm InGaAsN, AlGaInAs and InGaAsP quantum wells is made to gauge its gain performance. The small-signal modulation characteristics of a 250 µm MQW ridge waveguide (RWG) InGaAsN laser are presented and high-temperature characteristics are shown.

Item type: Article
ID code: 4011
Keywords: simulation, gain, modulation, bandwidths, InGaAsN lasers, Commerce, Electrical engineering. Electronics Nuclear engineering
Subjects: Social Sciences > Commerce
Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Strathprints Administrator
    Date Deposited: 25 Aug 2007
    Last modified: 16 Jul 2013 19:47
    URI: http://strathprints.strath.ac.uk/id/eprint/4011

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