Beyer, H.G and Gottschalg, R. and Betts, T.R. and Infield, D.G. (2003) Modelling the realistic short circuit current and MPP power of A-SI single and multijunction devices. In: 3rd World Conference on Photovoltaic Energy Conversion, 2003-05-11 - 2003-05-18, Osaka.
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
An I-V based model for amorphous silicon materials is presented that allows for the modelling of spectral effects on the performance of a-Si devices. These have been shown to be significant in colder and temperate climates. A simple model for the influence of varying spectra on the short circuit current is presented. It allows for accurate modelling of other device parameters such as MPP-power. The necessary spectral input for this model is generated by a model based on artificial neural network using the clear sky index and position of the Sun as input. The model is developed using long-term measurements taken at Loughborough and shows a good agreement for single and multi-junction devices.
| Item type: | Conference or Workshop Item (Paper) |
|---|---|
| ID code: | 39397 |
| Keywords: | modelling, realistic, short circuit current, mpp power, a-si , single, multi, junction devices, amorphous semiconductors , solar cells , silicon, short-circuit currents, semiconductor devices, semiconductor device models, power system simulation, photovoltaic power systems, neural nets , environmental factors, elemental semiconductors, Electrical engineering. Electronics Nuclear engineering |
| Subjects: | Technology > Electrical engineering. Electronics Nuclear engineering |
| Department: | Faculty of Engineering > Electronic and Electrical Engineering |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 25 Apr 2012 16:32 |
| Last modified: | 04 Oct 2012 17:23 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/39397 |
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