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Modelling shading on amorphous silicon single and double junction modules

Johansson, A. and Gottschalg, R. and Infield, D.G. (2003) Modelling shading on amorphous silicon single and double junction modules. In: 3rd World Conference on Photovoltaic Energy Conversion, 2003-05-11 - 2003-05-18, Osaka.

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Abstract

The effect of shading amorphous silicon mini-modules is investigated by means of measurements and simulation. Several devices are measured under varying degrees of shading and the reverse bias behaviour is investigated, including the reverse breakdown voltage. A simulation using a modified single diode model for amorphous silicon is presented, in which the Bishop extension of the shunt resistance is used to simulate the behaviour of shaded devices. The differences between the effect of shading on amorphous silicon and on crystalline silicon devices are investigated based on measurements and simulations. It is shown that the thin film cells do not develop hot spots in the same manner as crystalline silicon devices; they always break down at the interconnection to the adjacent cell.

Item type: Conference or Workshop Item (Paper)
ID code: 39393
Keywords: modelling, shading, amorphous silicon , single, double, junction modules, amorphous semiconductors, solar cells , silicon, semiconductor thin films, semiconductor device models, semiconductor device breakdown, elemental semiconductors, Electrical engineering. Electronics Nuclear engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 25 Apr 2012 16:21
    Last modified: 17 Jul 2013 15:31
    URI: http://strathprints.strath.ac.uk/id/eprint/39393

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