Picture of smart phone in human hand

World leading smartphone and mobile technology research at Strathclyde...

The Strathprints institutional repository is a digital archive of University of Strathclyde's Open Access research outputs. Strathprints provides access to thousands of Open Access research papers by University of Strathclyde researchers, including by Strathclyde researchers from the Department of Computer & Information Sciences involved in researching exciting new applications for mobile and smartphone technology. But the transformative application of mobile technologies is also the focus of research within disciplines as diverse as Electronic & Electrical Engineering, Marketing, Human Resource Management and Biomedical Enginering, among others.

Explore Strathclyde's Open Access research on smartphone technology now...

Photoluminescence, structural and electrical properties of passivated a-Si:H based thin films and corresponding solar cells

Pincik, E. and Kobayashi, H. and Takahashi, M. and Fujiwara, N. and Brunner, R. and Gleskova, H. and Jergel, M. and Mullerova, J. and Kucera, M. and Falcony, C. and Ortega, L. and Rusnak, J. and Mikula, M. and Zahoran, M. and Jurani, R. and Kral, M. (2004) Photoluminescence, structural and electrical properties of passivated a-Si:H based thin films and corresponding solar cells. Applied Surface Science, 235 (3). pp. 351-363. ISSN 0169-4332

Full text not available in this repository. Request a copy from the Strathclyde author

Abstract

This paper deals with the photoluminescence, structural and electricalproperties of chemically passivated a-Si:H basedthinfilms and correspondingthinfilmsolarcells. The structures were chemically passivated in three types of KCN and HCN solutions containing MeOH and/or with water. The photoluminescence measurements were performed at 6 K using Ar laser and lock-in signal recording device containing Ge and Si photodetectors. Optically determined band gap related photoluminescence signals were observed between 1.1 and 1.7 eV. The electricalproperties were measured by a high-sensitive charge version of deep level transient spectroscopy (Q-DLTS). The evolution of three basic groups of defects was observed. The structural studies were realized by the standard X-ray diffraction analysis. The cyanide treatment improved significantly the electrical characteristics of both corresponding MOS structures and solarcells due to the passivation of some parts of the dangling bonds by CN group. Particularly, the passivation of the defects at interfaces in MOS or solarcell multilayer structures was achieved which is of primary practical importance.