Picture of smart phone in human hand

World leading smartphone and mobile technology research at Strathclyde...

The Strathprints institutional repository is a digital archive of University of Strathclyde's Open Access research outputs. Strathprints provides access to thousands of Open Access research papers by University of Strathclyde researchers, including by Strathclyde researchers from the Department of Computer & Information Sciences involved in researching exciting new applications for mobile and smartphone technology. But the transformative application of mobile technologies is also the focus of research within disciplines as diverse as Electronic & Electrical Engineering, Marketing, Human Resource Management and Biomedical Enginering, among others.

Explore Strathclyde's Open Access research on smartphone technology now...

Photoluminescence properties of a-Si:H based thin films and corresponding solar cells

Pincik, E. and Kobayashi, H. and Gleskova, H. and Kucera, M. and Ortega, L. and Jergel, M. and Falcony, C. and Brunner, R. and Shimizu, T. and Nadazdy, V. and Zeman, M. and Mikula, M. and Kumeda, M. and van Swaaij, R. A. C. M. M. (2003) Photoluminescence properties of a-Si:H based thin films and corresponding solar cells. Thin Solid Films, 433 (1-2). pp. 344-351. ISSN 0040-6090

Full text not available in this repository. Request a copy from the Strathclyde author

Abstract

Amorphous hydrogenated silicon (a-Si:H) is a well-known semiconductor with metastable properties. Direct surface exposure, as it occurs e.g. in rf plasma equipments, introduces damage due to the charged particle bombardment. The paper deals with photoluminiscence properties of virgin, oxide layer covered and chemically treated (in KCN solutions) surfaces of a-Si:H and correspondingsolarcell structures. The cyanide treatment improves the electrical characteristics of MOS structures as well as solarcells. X-ray diffraction at grazing incidence and reflectance spectroscopy complete the study. The photoluminescence measurements were performed at liquid helium temperatures at 6 K using an Ar laser and lock-in signal recording device containing the PbS and Ge photodetectors. Photoluminescence bands were observed as broad luminescent peaks between 1.05–1.7 eV. Two new peaks were detected at 1.38 and 1.42 eV. The evolution of the band at ∼1.2 eV related to microcrystalline silicon is investigated. The fitting and simulation of photoluminiscence spectra are presented. The surface luminescent properties of a-Si:H based structures (double layers, single thinfilmsolarcells) before and after the passivation are compared with those of very thin oxide layers and chemically treated surfaces.