Smith, S.A. and Hopkins, J.M. and Hastie, J.E. and Calvez, S. and Kemp, A. and Burns, D. and Dawson, M.D. (2004) A diamond-microchip GaInNAs VECSEL operating at 1315nm. In: IEEE-LEOS Annual Meeting, 2004-11-07 - 2004-11-11, Puerto Rico.
Full text not available in this repository. (Request a copy from the Strathclyde author)Official URL: http://dx.doi.org/10.1109/LEOS.2004.1363245
Abstract
We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.
| Item type: | Conference or Workshop Item (Paper) |
|---|---|
| ID code: | 38604 |
| Keywords: | Vertical cavity surface emitting lasers , dielectrics , gallium arsenide, laser excitation, microchip lasers, optical pumping, optical surface waves, pump lasers, semiconductor lasers, surface emitting lasers, Physics |
| Subjects: | Science > Physics |
| Department: | Unknown Department Faculty of Science > Institute of Photonics |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 20 Mar 2012 15:23 |
| Last modified: | 04 Oct 2012 17:15 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/38604 |
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