A diamond-microchip GaInNAs VECSEL operating at 1315nm

Smith, S.A. and Hopkins, J.M. and Hastie, J.E. and Calvez, S. and Kemp, A. and Burns, D. and Dawson, M.D. (2004) A diamond-microchip GaInNAs VECSEL operating at 1315nm. In: IEEE-LEOS Annual Meeting, 2004-11-07 - 2004-11-11. (https://doi.org/10.1109/LEOS.2004.1363245)

Abstract

We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.

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• Item metadata

  Item type:	Conference or Workshop Item(Paper)
  ID code:	38604
  Dates:	Date Event November 2004 Published
  Subjects:	Science > Physics
  Department:	Faculty of Science > Physics Faculty of Science > Physics > Institute of Photonics
  Depositing user:	Pure Administrator
  Date deposited:	20 Mar 2012 15:23
  Last modified:	09 Apr 2024 05:03
  URI:	https://strathprints.strath.ac.uk/id/eprint/38604