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A diamond-microchip GaInNAs VECSEL operating at 1315nm

Smith, S.A. and Hopkins, J.M. and Hastie, J.E. and Calvez, S. and Kemp, A. and Burns, D. and Dawson, M.D. (2004) A diamond-microchip GaInNAs VECSEL operating at 1315nm. In: IEEE-LEOS Annual Meeting, 2004-11-07 - 2004-11-11, Puerto Rico.

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Abstract

We present the first microchip vertical external-cavity surface-emitting semiconductor laser operating at 1.3 μm. Continuous-wave power >180 mW was achieved from a cavity volume ∼0.001 mm3 using a diode-pumped GaInNAs VECSEL structure capillary-bonded to a dielectric-mirror-coated diamond heatspreader.

Item type: Conference or Workshop Item (Paper)
ID code: 38604
Keywords: Vertical cavity surface emitting lasers , dielectrics , gallium arsenide, laser excitation, microchip lasers, optical pumping, optical surface waves, pump lasers, semiconductor lasers, surface emitting lasers, Physics
Subjects: Science > Physics
Department: Unknown Department
Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 20 Mar 2012 15:23
    Last modified: 17 Jul 2013 15:17
    URI: http://strathprints.strath.ac.uk/id/eprint/38604

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