GaInNAs VCSEL structure as a mode-locking element for 1.3µm nd:YVO4 laser

Vysniauskas, G. and Hetterich, M. and Macaluso, R. and Burns, D. and Dawson, M.D. and Bente, E.A.J.M. and Egorov, A.Y. and Riechert, H. (2001) GaInNAs VCSEL structure as a mode-locking element for 1.3µm nd:YVO4 laser. In: Conference on Lasers and Electro-Optics, 2001. CLEO '01, 2001-05-06 - 2001-05-11. (https://doi.org/10.1109/CLEO.2001.947787)

Abstract

In this paper we present recent results obtained on passive modelocking of a NdYVO, laser operating at 1342nm using a semiconductor saturable absorber mirror (SESAM) using the novel semiconductor material system GaInNAslGaAs.

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• Item metadata

  Item type:	Conference or Workshop Item(Paper)
  ID code:	38367
  Dates:	Date Event May 2001 Published
  Subjects:	Science > Physics
  Department:	Faculty of Science > Physics > Institute of Photonics
  Depositing user:	Pure Administrator
  Date deposited:	09 Mar 2012 15:18
  Last modified:	09 Apr 2024 05:04
  URI:	https://strathprints.strath.ac.uk/id/eprint/38367