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GaInNAs VCSEL structure as a mode-locking element for 1.3µm nd:YVO4 laser

Vysniauskas, G. and Hetterich, M. and Macaluso, R. and Burns, D. and Dawson, M.D. and Bente, E.A.J.M. and Egorov, A.Y. and Riechert, H. (2001) GaInNAs VCSEL structure as a mode-locking element for 1.3µm nd:YVO4 laser. In: Conference on Lasers and Electro-Optics, 2001. CLEO '01, 2001-05-06 - 2001-05-11, Baltimore.

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Abstract

In this paper we present recent results obtained on passive modelocking of a NdYVO, laser operating at 1342nm using a semiconductor saturable absorber mirror (SESAM) using the novel semiconductor material system GaInNAslGaAs.

Item type: Conference or Workshop Item (Paper)
ID code: 38367
Keywords: diode lasers, vertical cavity surface emitting lasers, semiconductor materials, semiconductor lasers, optical materials, optical fibers , mirrors, laser modes , gallium arsenide, fiber lasers , modelocking, laser, structure, GaInNAs VCSEL , Physics
Subjects: Science > Physics
Department: Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 09 Mar 2012 15:18
    Last modified: 17 Jul 2013 15:18
    URI: http://strathprints.strath.ac.uk/id/eprint/38367

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