Vysniauskas, G. and Hetterich, M. and Macaluso, R. and Burns, D. and Dawson, M.D. and Bente, E.A.J.M. and Egorov, A.Y. and Riechert, H. (2001) GaInNAs VCSEL structure as a mode-locking element for 1.3µm nd:YVO4 laser. In: Conference on Lasers and Electro-Optics, 2001. CLEO '01, 2001-05-06 - 2001-05-11, Baltimore.
Full text not available in this repository. (Request a copy from the Strathclyde author)Official URL: http://dx.doi.org/10.1109/CLEO.2001.947787
Abstract
In this paper we present recent results obtained on passive modelocking of a NdYVO, laser operating at 1342nm using a semiconductor saturable absorber mirror (SESAM) using the novel semiconductor material system GaInNAslGaAs.
| Item type: | Conference or Workshop Item (Paper) |
|---|---|
| ID code: | 38367 |
| Keywords: | diode lasers, vertical cavity surface emitting lasers, semiconductor materials, semiconductor lasers, optical materials, optical fibers , mirrors, laser modes , gallium arsenide, fiber lasers , modelocking, laser, structure, GaInNAs VCSEL , Physics |
| Subjects: | Science > Physics |
| Department: | Faculty of Science > Institute of Photonics |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 09 Mar 2012 15:18 |
| Last modified: | 04 Oct 2012 17:16 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/38367 |
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