Strathprints Home | Open Access | Browse | Search | User area | Copyright | Help | Library Home | SUPrimo

Optimising layer thickness of multi-junction silicon devices for energy production

Andre, S. and Betts, T.R. and Gottschalg, R. and Infield, D.G. (2005) Optimising layer thickness of multi-junction silicon devices for energy production. In: 20th European Photovoltaic Solar Energy Conference, 2005-06-06 - 2005-06-10, Barcelona.

Full text not available in this repository. (Request a copy from the Strathclyde author)

Abstract

This chapter looks at optimising layer thickness of multi-junction silicon devices for energy production

Item type: Conference or Workshop Item (Paper)
ID code: 38138
Keywords: optimising, layer thickness, multi-junction, silicon devices, energy production, Electrical engineering. Electronics Nuclear engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 02 Mar 2012 17:02
    Last modified: 17 Jul 2013 15:33
    URI: http://strathprints.strath.ac.uk/id/eprint/38138

    Actions (login required)

    View Item