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Optimising layer thickness of multi-junction silicon devices for energy production

Andre, S. and Betts, T.R. and Gottschalg, R. and Infield, D.G. (2005) Optimising layer thickness of multi-junction silicon devices for energy production. In: 20th European Photovoltaic Solar Energy Conference, 2005-06-06 - 2005-06-10, Barcelona.

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Abstract

This chapter looks at optimising layer thickness of multi-junction silicon devices for energy production

Item type: Conference or Workshop Item (Paper)
ID code: 38138
Keywords: optimising, layer thickness, multi-junction, silicon devices, energy production, Electrical engineering. Electronics Nuclear engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Depositing user: Pure Administrator
Date Deposited: 02 Mar 2012 17:02
Last modified: 17 Jul 2013 14:33
URI: http://strathprints.strath.ac.uk/id/eprint/38138

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