Optimising layer thickness of multi-junction silicon devices for energy production
Andre, S. and Betts, T.R. and Gottschalg, R. and Infield, D.G. (2005) Optimising layer thickness of multi-junction silicon devices for energy production. In: 20th European Photovoltaic Solar Energy Conference, 2005-06-06 - 2005-06-10.
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This chapter looks at optimising layer thickness of multi-junction silicon devices for energy production
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Item type: Conference or Workshop Item(Paper) ID code: 38138 Dates: DateEventJune 2005PublishedKeywords: optimising, layer thickness, multi-junction, silicon devices, energy production, Electrical Engineering. Electronics Nuclear Engineering Subjects: Technology > Electrical engineering. Electronics Nuclear engineering Department: Faculty of Engineering > Electronic and Electrical Engineering Depositing user: Pure Administrator Date deposited: 02 Mar 2012 17:02 Last modified: 18 Jan 2023 12:59 URI: https://strathprints.strath.ac.uk/id/eprint/38138
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