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Amorphous Si TFTs on plastically deformed spherical domes

Hsu, P. I. and Gleskova, H. and Huang, M. and Suo, Z. and Wagner, S. and Sturm, J. C. (2002) Amorphous Si TFTs on plastically deformed spherical domes. Journal of Non-crystalline Solids, 299-302 (Part 2). pp. 1355-1359. ISSN 0022-3093

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Abstract

There is a growing interest in the design and fabrication of flexible and rugged electronics particularly for large-area displays and sensor arrays. In this work, we describe the fabrication of amorphous silicon (a-Si:H) thin film transistors (TFTs) on a Kapton substrate which can be permanently deformed into a spherical cap shape. This level of strain would crack uniform a-Si:H device films. To prevent fractures in our TFT structure, the silicon and silicon nitride layers of the TFTs are patterned to create isolated device islands. After deformation, these brittle islands can remain crack-free, and the TFTs achieve comparable device behavior despite average strain in the substrate in excess of 5%.

Item type: Article
ID code: 38118
Keywords: large-area displays , sensor arrays, spherical domes, Electrical engineering. Electronics Nuclear engineering, Materials Chemistry, Ceramics and Composites, Electronic, Optical and Magnetic Materials, Condensed Matter Physics
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
Depositing user: Pure Administrator
Date Deposited: 02 Mar 2012 14:05
Last modified: 06 May 2014 16:22
URI: http://strathprints.strath.ac.uk/id/eprint/38118

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