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Defect evolution and interplay in n-type InN

Rauch, Christian and Tuomisto, Filip and Vilalta-Clemente, Arantxa and Lacroix, Bertrand and Ruterana, Pierre and Kraeusel, Simon and Hourahine, Benjamin and Schaff, William J. (2012) Defect evolution and interplay in n-type InN. Applied Physics Letters, 100 (9). 091907. ISSN 0003-6951

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Abstract

The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6×1020 cm−3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, mixed In-N vacancy complexes (VIn-VN) are the dominant III-sublattice related vacancy defects. An increase in the number of VN in these complexes toward the interface suggests high concentrations of additional isolated VN and VN-clusters near the GaN buffer layer and coincides with elevated dislocation densities in that area.

Item type: Article
ID code: 38080
Keywords: defect evolution, n-type InN , dislocation densities, Solid state physics. Nanoscience
Subjects: Science > Physics > Solid state physics. Nanoscience
Department: Faculty of Science > Physics
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 01 Mar 2012 16:30
    Last modified: 05 Jun 2013 16:58
    URI: http://strathprints.strath.ac.uk/id/eprint/38080

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