Rauch, Christian and Tuomisto, Filip and Vilalta-Clemente, Arantxa and Lacroix, Bertrand and Ruterana, Pierre and Kraeusel, Simon and Hourahine, Benjamin and Schaff, William J. (2012) Defect evolution and interplay in n-type InN. Applied Physics Letters, 100 (9). 091907. ISSN 0003-6951
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6×1020 cm−3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, mixed In-N vacancy complexes (VIn-VN) are the dominant III-sublattice related vacancy defects. An increase in the number of VN in these complexes toward the interface suggests high concentrations of additional isolated VN and VN-clusters near the GaN buffer layer and coincides with elevated dislocation densities in that area.
| Item type: | Article |
|---|---|
| ID code: | 38080 |
| Keywords: | defect evolution, n-type InN , dislocation densities, Solid state physics. Nanoscience |
| Subjects: | Science > Physics > Solid state physics. Nanoscience |
| Department: | Faculty of Science > Physics |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 01 Mar 2012 16:30 |
| Last modified: | 18 Apr 2012 14:26 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/38080 |
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