Rauch, Christian and Tuomisto, Filip and Vilalta-Clemente, Arantxa and Lacroix, Bertrand and Ruterana, Pierre and Kraeusel, Simon and Hourahine, Benjamin and Schaff, William J. (2012) Defect evolution and interplay in n-type InN. Applied Physics Letters, 100 (9). ISSN 0003-6951Full text not available in this repository. (Request a copy from the Strathclyde author)
The nature and interplay of intrinsic point and extended defects in n-type Si-doped InN epilayers with free carrier concentrations up to 6.6×1020 cm−3 are studied using positron annihilation spectroscopy and transmission electron microscopy and compared to results from undoped irradiated films. In as-grown Si-doped samples, mixed In-N vacancy complexes (VIn-VN) are the dominant III-sublattice related vacancy defects. An increase in the number of VN in these complexes toward the interface suggests high concentrations of additional isolated VN and VN-clusters near the GaN buffer layer and coincides with elevated dislocation densities in that area.
|Keywords:||defect evolution, n-type InN , dislocation densities, Solid state physics. Nanoscience, Physics and Astronomy (miscellaneous)|
|Subjects:||Science > Physics > Solid state physics. Nanoscience|
|Department:||Faculty of Science > Physics|
|Depositing user:||Pure Administrator|
|Date Deposited:||01 Mar 2012 16:30|
|Last modified:||22 Mar 2017 12:01|