Gleskova, H. and Hsu, P. I. and Xi, Z. and Sturm, J. C. and Suo, Z. and Wagner, Sigurd (2004) Field-effect mobility of amorphous silicon thin-film transistors under strain. Journal of Non-Crystalline Solids, 338-340 (1 SPEC). pp. 732-735. ISSN 0022-3093Full text not available in this repository. (Request a copy from the Strathclyde author)
We applied strain ranging from 1% compressive to ∼0.3% tensile to a-Si:H TFTs on polyimide foils by bending them inward or outward, or by stretching them in a microstrain tester. We also applied strain to a-Si:H TFTs by deforming a flat substrate into a spherical dome. In each case, compression lowered and tension raised the on-current and hence the electron field-effect mobility. We conclude that compressive strain broadens both the valence and conduction band tails of the a-Si:H channel material, and thus reduces the effective electron mobility. We show that the mobility can be used as an indicator of local mechanical strain.
|Keywords:||silicon thin-film transistors , thin-film transistors , field-effect mobility, Electrical engineering. Electronics Nuclear engineering, Materials Chemistry, Ceramics and Composites, Electronic, Optical and Magnetic Materials, Condensed Matter Physics|
|Subjects:||Technology > Electrical engineering. Electronics Nuclear engineering|
|Department:||Faculty of Engineering > Electronic and Electrical Engineering|
|Depositing user:||Pure Administrator|
|Date Deposited:||29 Feb 2012 16:00|
|Last modified:||13 Jan 2017 03:23|