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Field-effect mobility of amorphous silicon thin-film transistors under strain

Gleskova, H. and Hsu, P. I. and Xi, Z. and Sturm, J. C. and Suo, Z. and Wagner, S. (2004) Field-effect mobility of amorphous silicon thin-film transistors under strain. Journal of Non-crystalline Solids, 338-340. pp. 732-735. ISSN 0022-3093

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Abstract

We applied strain ranging from 1% compressive to ∼0.3% tensile to a-Si:H TFTs on polyimide foils by bending them inward or outward, or by stretching them in a microstrain tester. We also applied strain to a-Si:H TFTs by deforming a flat substrate into a spherical dome. In each case, compression lowered and tension raised the on-current and hence the electron field-effect mobility. We conclude that compressive strain broadens both the valence and conduction band tails of the a-Si:H channel material, and thus reduces the effective electron mobility. We show that the mobility can be used as an indicator of local mechanical strain.

Item type: Article
ID code: 38023
Keywords: silicon thin-film transistors , thin-film transistors , field-effect mobility, Electrical engineering. Electronics Nuclear engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
Depositing user: Pure Administrator
Date Deposited: 29 Feb 2012 16:00
Last modified: 04 Oct 2012 12:40
URI: http://strathprints.strath.ac.uk/id/eprint/38023

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