Gleskova, H. and Wagner, S. (2001) Electron mobility in amorphous silicon thin-film transistors under compressive strain. Applied Physics Letters, 79 (20). pp. 3347-3349. ISSN 0003-6951Full text not available in this repository. (Request a copy from the Strathclyde author)
We evaluated amorphous silicon thin-film transistors under uniaxial compressive strain of up to 1%. The on-current and hence the electron linear mobility decrease. The off-current, leakage current, and the threshold voltage do not change. The mobility decreases linearly with applied compressive strain. Upon the application of stress for up to 40 h the mobility drops "instantly" and then remains unchanged. We conclude that compressive strain broadens both the valence and conduction band tails of the a-Si:H channel material, and thus reduces the effective electron mobility.
|Keywords:||electron mobility, thin-film transistors , compressive strain, Electrical engineering. Electronics Nuclear engineering, Physics and Astronomy (miscellaneous)|
|Subjects:||Technology > Electrical engineering. Electronics Nuclear engineering|
|Department:||Faculty of Engineering > Electronic and Electrical Engineering|
|Depositing user:||Pure Administrator|
|Date Deposited:||29 Feb 2012 15:52|
|Last modified:||22 Mar 2017 10:13|