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Electron mobility in amorphous silicon thin-film transistors under compressive strain

Gleskova, H. and Wagner, S. (2001) Electron mobility in amorphous silicon thin-film transistors under compressive strain. Applied Physics Letters, 79 (20). pp. 3347-3349. ISSN 0003-6951

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Abstract

We evaluated amorphous silicon thin-film transistors under uniaxial compressive strain of up to 1%. The on-current and hence the electron linear mobility decrease. The off-current, leakage current, and the threshold voltage do not change. The mobility decreases linearly with applied compressive strain. Upon the application of stress for up to 40 h the mobility drops "instantly" and then remains unchanged. We conclude that compressive strain broadens both the valence and conduction band tails of the a-Si:H channel material, and thus reduces the effective electron mobility.

Item type: Article
ID code: 38020
Keywords: electron mobility, thin-film transistors , compressive strain, Electrical engineering. Electronics Nuclear engineering, Physics and Astronomy (miscellaneous)
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
Depositing user: Pure Administrator
Date Deposited: 29 Feb 2012 15:52
Last modified: 07 May 2014 09:54
URI: http://strathprints.strath.ac.uk/id/eprint/38020

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