Gleskova, H. and Wagner, S. (2001) Electron mobility in amorphous silicon thin-film transistors under compressive strain. Applied Physics Letters, 79. pp. 3347-3349. ISSN 0003-6951
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
We evaluated amorphous silicon thin-film transistors under uniaxial compressive strain of up to 1%. The on-current and hence the electron linear mobility decrease. The off-current, leakage current, and the threshold voltage do not change. The mobility decreases linearly with applied compressive strain. Upon the application of stress for up to 40 h the mobility drops “instantly” and then remains unchanged. We conclude that compressive strain broadens both the valence and conduction band tails of the a-Si:H channel material, and thus reduces the effective electron mobility.
| Item type: | Article |
|---|---|
| ID code: | 38020 |
| Keywords: | electron mobility, thin-film transistors , compressive strain, Electrical engineering. Electronics Nuclear engineering |
| Subjects: | Technology > Electrical engineering. Electronics Nuclear engineering |
| Department: | Faculty of Engineering > Electronic and Electrical Engineering |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 29 Feb 2012 15:52 |
| Last modified: | 04 Oct 2012 12:39 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/38020 |
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