Gleskova, H. and Wagner, S. and Gasparik, V. and Kovac, P. (2001) 150ºC Amorphous silicon thin-film transistor technology for polyimide substrates: silicon nitride layer and interface optimization. Journal of the Electrochemical Society, 148 (7). G370-G374. ISSN 0013-4651
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
We have developed a 150°C technology for amorphous silicon thin-film transistors (a-Si:H TFTs) on polyimide substrates deposited by plasma enhanced chemical vapor deposition. The silicon nitride gate dielectric and the a-Si:H channel material were tailored to provide the least leakage current and midgap defect density, respectively. In addition, we conducted experiments on the TFT structure and fabrication with the aim of obtaining high electron mobility. TFTs with back-channel etch and channel-passivated structures were fabricated on glass or 51 µm thick polyimide foil. The a-Si:H TFTs have an on/off current ratio of ~107 and an electron mobility of ~0.7 cm2/V s.
| Item type: | Article |
|---|---|
| ID code: | 38019 |
| Keywords: | silicon, thin film transistors, elemental semiconductors, amorphous semiconductors, hydrogen, Electrical engineering. Electronics Nuclear engineering |
| Subjects: | Technology > Electrical engineering. Electronics Nuclear engineering |
| Department: | Faculty of Engineering > Electronic and Electrical Engineering |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 29 Feb 2012 15:50 |
| Last modified: | 04 Oct 2012 12:39 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/38019 |
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