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150ºC Amorphous silicon thin-film transistor technology for polyimide substrates: silicon nitride layer and interface optimization

Gleskova, H. and Wagner, S. and Gasparik, V. and Kovac, P. (2001) 150ºC Amorphous silicon thin-film transistor technology for polyimide substrates: silicon nitride layer and interface optimization. Journal of the Electrochemical Society, 148 (7). G370-G374. ISSN 0013-4651

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Abstract

We have developed a 150°C technology for amorphous silicon thin-film transistors (a-Si:H TFTs) on polyimide substrates deposited by plasma enhanced chemical vapor deposition. The silicon nitride gate dielectric and the a-Si:H channel material were tailored to provide the least leakage current and midgap defect density, respectively. In addition, we conducted experiments on the TFT structure and fabrication with the aim of obtaining high electron mobility. TFTs with back-channel etch and channel-passivated structures were fabricated on glass or 51 µm thick polyimide foil. The a-Si:H TFTs have an on/off current ratio of ~107 and an electron mobility of ~0.7 cm2/V s.

Item type: Article
ID code: 38019
Keywords: silicon, thin film transistors, elemental semiconductors, amorphous semiconductors, hydrogen, Electrical engineering. Electronics Nuclear engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 29 Feb 2012 15:50
    Last modified: 04 Oct 2012 12:39
    URI: http://strathprints.strath.ac.uk/id/eprint/38019

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