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Influence of strain-compensating and strain-mediating layers on the optical properties of mOVPE-grown GaInnAs single quantum-well structures

Sun, H.D. and Clark, A.H. and Calvez, S. and Dawson, M.D. and Kim, K.S. and Kim, T. and Park, Y.J. (2005) Influence of strain-compensating and strain-mediating layers on the optical properties of mOVPE-grown GaInnAs single quantum-well structures. In: International Conference on Indium Phosphide and Related Materials, 2005-05-08 - 2005-05-12, Glasgow.

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Abstract

In summary, we have investigated the dependence of the optical properties of GaInNAs QWs grown by MOVPE on GaNAs SCLs and InGaAs SMLs. Introduction of only SCLs between the GaAs and GaInNAs QW deteriorates the epitaxial quality of the QW due to the increased stress between tensile-strained GaNAs and compressive-strained GaInNAs. This detrimental effect of the interface can be countered by the insertion of a layer of InGaAs. Contrary to what observed in MBE, MOVPE-grown GaInNAs QW with combined SCLs/SMLs demonstrated blue-shifted PL due to the decrease N content with improved QW quality.

Item type: Conference or Workshop Item (Paper)
ID code: 38008
Keywords: influence, strain-compensating, strain-mediating, layers, optical properties , MOVPE-grown GaInNAs , single quantum-well structures , Physics
Subjects: Science > Physics
Department: Faculty of Science > Institute of Photonics
Faculty of Science > Physics
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 29 Feb 2012 14:56
    Last modified: 17 Jul 2013 15:21
    URI: http://strathprints.strath.ac.uk/id/eprint/38008

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