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High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities

Kuszelewicz, R. and Benoit, J.-M. and Barbay, S. and Lemaitre, A. and Patriarche, G. and Meunier, K. and Tierno, Alessio and Ackemann, Thorsten (2012) High density InAlAs/GaAlAs quantum dots for non-linear optics in microcavities. Journal of Applied Physics, 111. ISSN 0021-8979

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    Abstract

    Structural and optical properties of InAlAs/GaAlAs quantum dots grown by molecular beam epitaxy are studied using transmission electron microscopy, temperature- and time resolvedphotoluminescence. The control of the recombination lifetime (50 ps – 1.25 ns), and of the dot density (5.10−8 – 2.1011 cm−3) strongly suggest that these material systems can find wide applications in opto-electronic devices as focusing non linear dispersive materials as well as fast saturable absorbers.

    Item type: Article
    ID code: 37599
    Keywords: opto-electronic devices , nonlinear optics, Optics. Light, Physics and Astronomy(all)
    Subjects: Science > Physics > Optics. Light
    Department: Faculty of Science > Physics
    Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 13 Feb 2012 09:17
    Last modified: 27 Mar 2014 17:16
    URI: http://strathprints.strath.ac.uk/id/eprint/37599

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