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Quantum electron beam probe of sidewall dry-etch damage

Rahman, M and Williamson, JG and Mathieson, K and Dick, G and Brown, MJ and Duffy, S and Wilkinson, CDW (2000) Quantum electron beam probe of sidewall dry-etch damage. Microelectronic Engineering, 53 (1-4). pp. 371-374. ISSN 0167-9317

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Abstract

Damage as a result of ion bombardment may occur both at top surfaces and at sidewalls. We propose a method of probing sidewall damage using coherent electron focusing. A collimated electron beam is reflected off an internal boundary formed by dry etching. Spectra measured in an applied magnetic field are influenced strongly by increased levels of etch damage. Monte Carlo simulations combined with experiments on multiple beams reveal the separate contributions of boundary roughness and inelastic electron scattering. Electrostatic calculations reveal a damage shadow beneath the sidewall.

Item type: Article
ID code: 37554
Notes: 25th International Conference on Micro- and Nano-Engineering, ROME, ITALY, SEP 21-23, 1999
Keywords: electron beam , dry-etch damage , quantum electron beam, Optics. Light, Surfaces, Coatings and Films, Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Electrical and Electronic Engineering, Condensed Matter Physics
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 09 Feb 2012 16:36
    Last modified: 05 Sep 2014 15:03
    URI: http://strathprints.strath.ac.uk/id/eprint/37554

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