Rahman, M and Williamson, JG and Mathieson, K and Dick, G and Brown, MJ and Duffy, S and Wilkinson, CDW (2000) Quantum electron beam probe of sidewall dry-etch damage. Microelectronic Engineering, 53 (1-4). pp. 371-374. ISSN 0167-9317
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
Damage as a result of ion bombardment may occur both at top surfaces and at sidewalls. We propose a method of probing sidewall damage using coherent electron focusing. A collimated electron beam is reflected off an internal boundary formed by dry etching. Spectra measured in an applied magnetic field are influenced strongly by increased levels of etch damage. Monte Carlo simulations combined with experiments on multiple beams reveal the separate contributions of boundary roughness and inelastic electron scattering. Electrostatic calculations reveal a damage shadow beneath the sidewall.
| Item type: | Article |
|---|---|
| ID code: | 37554 |
| Notes: | 25th International Conference on Micro- and Nano-Engineering, ROME, ITALY, SEP 21-23, 1999 |
| Keywords: | electron beam , dry-etch damage , quantum electron beam, Optics. Light |
| Subjects: | Science > Physics > Optics. Light |
| Department: | Faculty of Science > Institute of Photonics |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 09 Feb 2012 16:36 |
| Last modified: | 12 Mar 2012 11:46 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/37554 |
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