Rahman, M and Mathieson, K (2000) Topographic effects in low-energy radiation damage. Applied Physics Letters, 77 (9). pp. 1322-1324. ISSN 0003-6951Full text not available in this repository. (Request a copy from the Strathclyde author)
We have studied the effect of low-index channeling on sidewall dry-etch damage. A quantum electron beam in the two-dimensional electron gas of a GaAs/AlGaAs heterostructure was used to probe electrical damage at a specific depth down an etched sidewall. In analyzing the measured behavior as a function of etch time we have developed a model for the sidewall damage distribution that takes into account the geometry of the 〈110〉 channels in detail. The analysis shows that more damage is possible beneath regions of high topography than is usually assumed.
|Keywords:||photonics, radiation damage , radiation , optics, Optics. Light, Physics and Astronomy (miscellaneous)|
|Subjects:||Science > Physics > Optics. Light|
|Department:||Faculty of Science > Physics > Institute of Photonics|
|Depositing user:||Pure Administrator|
|Date Deposited:||09 Feb 2012 16:35|
|Last modified:||05 May 2016 00:18|