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Simulation of GaAs 3-D pixel detectors

Mathieson, K and Bates, R and Meikle, A and O'Shea, V and Passmore, MS and Rahman, M and Smith, KM (2001) Simulation of GaAs 3-D pixel detectors. Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 466 (1). pp. 194-201. ISSN 0168-9002

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Abstract

The performance of an architecture for X-ray pixel detectors is discussed. The three-dimensional (3-D) structure has electrodes which penetrate the bulk of the detector medium allowing low-bias, high-speed operation along with improved charge collection efficiency. We use the modelling package MEDICI to simulate epitaxial gallium arsenide 3-D detectors. This includes an analysis of charge transport and signal formation, with details of the expected charge collection efficiencies. These detectors may be fabricated by a number of means including dry etching. The effect of dry-etch damage on detector performance is analysed as this is potentially an important factor.

Item type: Article
ID code: 37543
Notes: 2nd International Workshop on Radiation Imaging Detectors, FREIBURG, GERMANY, JUL 02-06, 2000
Keywords: photonics, pixel detectors , GaAs 3-D pixel detectors , arsenide 3-D detectors, Optics. Light
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 09 Feb 2012 16:06
    Last modified: 12 Mar 2012 11:46
    URI: http://strathprints.strath.ac.uk/id/eprint/37543

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