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Cathodoluminescence of rare earth implanted AlInN

Wang, K. and Martin, R.W. and Nogales, E. and Edwards, P.R. and O'Donnell, K.P. and Lorenz, K. and Alves, E. and Watson, I.M. (2006) Cathodoluminescence of rare earth implanted AlInN. Applied Physics Letters, 89 (13). -. ISSN 0003-6951

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Abstract

AlInN layers implanted with europium and erbium ions are systematically studied and compared with similarly implanted GaN. Cathodoluminescence from four series of annealed samples shows that the Eu/Er emissions from AlInN are considerably broader than those from GaN, while the peak positions only change slightly. The rate of increase of cathodoluminescence intensity with annealing temperature, up to 1300 °C, is analyzed for all four series. For Eu the increase exceeds 10× in both hosts. Although some decomposition is observed for annealing at 1200 °C, well above the growth temperature, AlInN is shown to be a surprisingly robust host for rare earth ions.

Item type: Article
ID code: 37517
Keywords: cathodoluminescence, aluminium compounds, indium compounds, gallium compounds, wide band gap semiconductors, rare earth, AllnN, implanted, Physics, Physics and Astronomy (miscellaneous)
Subjects: Science > Physics
Department: Faculty of Science > Physics
Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 09 Feb 2012 09:54
    Last modified: 04 Sep 2014 20:20
    URI: http://strathprints.strath.ac.uk/id/eprint/37517

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