Rice, G.B. and Jones, D.R. and Kim, K.S. and Girkin, J.M. and Jarozynski, D. and Dawson, M.D. (2003) Micromachining of gallium nitride, sapphire and silicon carbide using ultra-short pulses. Proceedings of SPIE the International Society for Optical Engineering, 5147. pp. 299-307. ISSN 0277-786X
Full text not available in this repository. (Request a copy from the Strathclyde author)Official URL: http://dx.doi.org/10.1117/12.543662
Abstract
Controlled ablation of GaN, sapphire and SiC was investigated using both nanosecond and femtosecond laser pulses. Well-defined patterns of feature size similar to 10's of microns were successfully machined by fs pulses in all materials. Nanosecond (355nm) machining was primarily successful in machining GaN. Results for the different materials and pulse duration regimes are. compared and contrasted.
| Item type: | Article |
|---|---|
| ID code: | 37253 |
| Notes: | Alt02 International Conference on Advanced Laser Technologies (2003) |
| Keywords: | gallium nitride , sapphire , silicon carbide , ultra-short pulses, optical engineering, Physics |
| Subjects: | Science > Physics |
| Department: | Faculty of Science > Physics Faculty of Science > Institute of Photonics |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 31 Jan 2012 16:00 |
| Last modified: | 12 Mar 2012 11:45 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/37253 |
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