Picture of Open Access badges

Discover Open Access research at Strathprints

It's International Open Access Week, 24-30 October 2016. This year's theme is "Open in Action" and is all about taking meaningful steps towards opening up research and scholarship. The Strathprints institutional repository is a digital archive of University of Strathclyde research outputs. Explore recent world leading Open Access research content by University of Strathclyde researchers and see how Strathclyde researchers are committing to putting "Open in Action".


Image: h_pampel, CC-BY

Low-energy electron-beam irradiation of GaN-based quantum well structures

Jahn, U. and Dhar, S. and Kostial, H. and Waltereit, P. and Scholz, F. and Watson, I.M. and Fujiwara, K. (2003) Low-energy electron-beam irradiation of GaN-based quantum well structures. Physica Status Solidi C. pp. 2223-2226. ISSN 1862-6351

Full text not available in this repository. (Request a copy from the Strathclyde author)


The electronic properties of (In, Ga)N/GaN quantum wells significantly depend on the exposure dose of low-energy electron-beam irradiation (LEEBI), which is used, e.g., for cathodoluminescence (CL). For unintentionally doped structures, we observe a simultaneous LEEBI-induced activation of donors and acceptors. Thus, the resistivity of the layers remains unchanged, while the quantum efficiency and optical transition energy increase significantly under LEEBI. The electric-field distribution in a p–n structure is changed towards the flat-band condition during LEEBI indicating an electron-beam-induced passivation of acceptors in the p-type layer.