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The Strathprints institutional repository is a digital archive of University of Strathclyde research outputs.

Strathprints serves world leading Open Access research by the University of Strathclyde, including research by the Strathclyde Institute of Pharmacy and Biomedical Sciences (SIPBS), where research centres such as the Industrial Biotechnology Innovation Centre (IBioIC), the Cancer Research UK Formulation Unit, SeaBioTech and the Centre for Biophotonics are based.

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Low-energy electron-beam irradiation of GaN-based quantum well structures

Jahn, U. and Dhar, S. and Kostial, H. and Waltereit, P. and Scholz, F. and Watson, I.M. and Fujiwara, K. (2003) Low-energy electron-beam irradiation of GaN-based quantum well structures. Physica Status Solidi C. pp. 2223-2226. ISSN 1862-6351

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Abstract

The electronic properties of (In, Ga)N/GaN quantum wells significantly depend on the exposure dose of low-energy electron-beam irradiation (LEEBI), which is used, e.g., for cathodoluminescence (CL). For unintentionally doped structures, we observe a simultaneous LEEBI-induced activation of donors and acceptors. Thus, the resistivity of the layers remains unchanged, while the quantum efficiency and optical transition energy increase significantly under LEEBI. The electric-field distribution in a p–n structure is changed towards the flat-band condition during LEEBI indicating an electron-beam-induced passivation of acceptors in the p-type layer.