Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging

Trager-Cowan, Carol and Sweeney, Francis and Wilkinson, A.J. and Trimby, P.W. and Day, A.P. and Gholinia, A and Schmidt, N.H. and Parbrook, P.J. and Watson, Ian; Kuball, M and Myers, T.H. and Redwing, J.M. and Mukai, T, eds. (2006) Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging. In: GaN, AIN, InN and related materials. Materials research society symposium proceedings . Materials Research Society, USA, pp. 677-682. ISBN 9781558998469

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Abstract

In this paper we describe the use of electron backscatter diffraction (EBSD) mapping and electron channeling contrast imaging-in the scanning electron microscope-to study tilt, atomic steps and dislocations in epitaxial GaN thin films. We show results from epitaxial GaN thin films and from a just coalesced epitaxial laterally overgrown GaN thin film. From our results we deduce that EBSD may be used to measure orientation changes of the order of 0.02 degrees, in GaN thin films. As EBSD has a spatial resolution of approximate to 20 rim, this means we have a powerful technique with which to quantitatively map surface tilt. We also demonstrate that channeling contrast in electron channeling contrast images may be used to image tilt, atomic steps and threading dislocations in GaN thin films.

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