Picture of two heads

Open Access research that challenges the mind...

The Strathprints institutional repository is a digital archive of University of Strathclyde research outputs. Strathprints provides access to thousands of Open Access research papers by University of Strathclyde researchers, including those from the School of Psychological Sciences & Health - but also papers by researchers based within the Faculties of Science, Engineering, Humanities & Social Sciences, and from the Strathclyde Business School.

Discover more...

Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging

Trager-Cowan, Carol and Sweeney, Francis and Wilkinson, A.J. and Trimby, P.W. and Day, A.P. and Gholinia, A and Schmidt, N.H. and Parbrook, P.J. and Watson, Ian (2006) Characterization of nitride thin films by electron backscatter diffraction and electron channeling contrast imaging. In: GaN, AIN, InN and related materials. Materials research society symposium proceedings . Materials Research Society, Warrendale, pp. 677-682. ISBN 9781558998469

Full text not available in this repository. (Request a copy from the Strathclyde author)

Abstract

In this paper we describe the use of electron backscatter diffraction (EBSD) mapping and electron channeling contrast imaging-in the scanning electron microscope-to study tilt, atomic steps and dislocations in epitaxial GaN thin films. We show results from epitaxial GaN thin films and from a just coalesced epitaxial laterally overgrown GaN thin film. From our results we deduce that EBSD may be used to measure orientation changes of the order of 0.02 degrees, in GaN thin films. As EBSD has a spatial resolution of approximate to 20 rim, this means we have a powerful technique with which to quantitatively map surface tilt. We also demonstrate that channeling contrast in electron channeling contrast images may be used to image tilt, atomic steps and threading dislocations in GaN thin films.