Schlosser, Peter and Hastie, Jennifer and Calvez, Stephane and Krysa, A.B. and Dawson, Martin (2009) InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm. In: Annual Meeting of the IEEE Photonics Society, 2009-10-04, Belek-Antalya.
Full text not available in this repository. (Request a copy from the Strathclyde author)Official URL: http://dx.doi.org/10.1109/LEOS.2009.5343357
Abstract
InP/GaInP quantum dots, self assembled during epitaxial growth, are incorporated into the gain structure of an optically-pumped semiconductor disk laser. Laser emission at 740 nm has been achieved in a single transverse mode.
| Item type: | Conference or Workshop Item (Paper) |
|---|---|
| ID code: | 36725 |
| Keywords: | photonics, semiconductor disk laser , InGaN laser source, Optics. Light |
| Subjects: | Science > Physics > Optics. Light |
| Department: | Faculty of Science > Physics Faculty of Science > Institute of Photonics |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 16 Jan 2012 09:56 |
| Last modified: | 04 Oct 2012 17:54 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/36725 |
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