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InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm

Schlosser, Peter and Hastie, Jennifer and Calvez, Stephane and Krysa, A.B. and Dawson, Martin (2009) InP/GaInP quantum dot semiconductor disk laser for TEM00 emission at 740 nm. In: Annual Meeting of the IEEE Photonics Society, 2009-10-04, Belek-Antalya.

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Abstract

InP/GaInP quantum dots, self assembled during epitaxial growth, are incorporated into the gain structure of an optically-pumped semiconductor disk laser. Laser emission at 740 nm has been achieved in a single transverse mode.

Item type: Conference or Workshop Item (Paper)
ID code: 36725
Keywords: photonics, semiconductor disk laser , InGaN laser source, Optics. Light
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Physics
Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 16 Jan 2012 09:56
    Last modified: 17 Jul 2013 16:22
    URI: http://strathprints.strath.ac.uk/id/eprint/36725

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