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Zeeman splittings of the 5D0–7F2 transitions of Eu3+ ions implanted into GaN

Kachkanov, V. and O'Donnell, K. P. and Rice, C. and Wolverson, D. and Martin, R. W. and Lorenz, K. and Alves, E. and Bockowski, M. (2011) Zeeman splittings of the 5D0–7F2 transitions of Eu3+ ions implanted into GaN. MRS Online Proceedings Library, 1290. ISSN 1946-4274

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Abstract

We report the magnetic field splittings of emission lines assigned to the 5D0–7F2 transitions of Eu3+ centres in GaN. The application of a magnetic field in the c-axis direction (B||c) leads to a splitting of the major lines at 621 nm, 622 nm and 622.8 nm into two components. The Zeeman splitting is linear with magnetic field up to 5 Tesla for each line. In contrast, a magnetic field applied in the growth plane (B┴c) does not influence the photoluminescence spectra. The estimated g-factors vary slightly from sample to sample with mean values of g|| ~2.8, ~1.5 and ~2.0 for the emission lines at 621 nm, 622 nm and 622.8 nm respectively.

Item type: Article
ID code: 35791
Keywords: Eu, ion-implantation, nitride, TIC - Bionanotechnology, Physics, Mechanics of Materials, Materials Science(all), Mechanical Engineering, Condensed Matter Physics
Subjects: Science > Physics
Department: Faculty of Science > Physics
Technology and Innovation Centre > Bionanotechnology
Technology and Innovation Centre > Photonics
Depositing user: Pure Administrator
Date Deposited: 10 Nov 2011 20:29
Last modified: 15 Apr 2015 08:38
Related URLs:
URI: http://strathprints.strath.ac.uk/id/eprint/35791

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