Kachkanov, V. and Dolbnya, I.P. and O'Donnell, Kevin and Martin, Robert and Edwards, Paul and Pereira, S. (2011) InGaN epilayer characterization by microfocused x-ray reciprocal space mapping. Applied Physics Letters, 99 (18). ISSN 0003-6951
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Abstract
We report the use of microfocused three-dimensional x-ray reciprocal space mapping to study InGaN epilayers with average InN content 20%-22%. Analysis of the full volume of reciprocal space, while probing samples on the microscale with a focused x-ray beam, allowed us to gain valuable information about the nanostructure of InN-rich InGaN epilayers. It is found that “seed” InGaN mosaic nanocrystallites are twisted with respect to the ensemble average and strain-free. The initial stages of InGaN-on-GaN epitaxial growth, therefore, conform to the Volmer-Weber growth mechanism with “seeds” nucleated on strain fields generated by the a-type edge dislocations.
| Item type: | Article |
|---|---|
| ID code: | 35790 |
| Keywords: | epitaxial growth, gallium nitride, gallium compounds, wide band gap semiconductors , TIC - Bionanotechnology, Physics |
| Subjects: | Science > Physics |
| Department: | Faculty of Science > Physics ?? 120 ?? ?? 122 ?? |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 10 Nov 2011 19:04 |
| Last modified: | 16 Jun 2013 10:49 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/35790 |
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