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InGaN epilayer characterization by microfocused x-ray reciprocal space mapping

Kachkanov, V. and Dolbnya, I.P. and O'Donnell, Kevin and Martin, Robert and Edwards, Paul and Pereira, S. (2011) InGaN epilayer characterization by microfocused x-ray reciprocal space mapping. Applied Physics Letters, 99 (18). ISSN 0003-6951

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Abstract

We report the use of microfocused three-dimensional x-ray reciprocal space mapping to study InGaN epilayers with average InN content 20%-22%. Analysis of the full volume of reciprocal space, while probing samples on the microscale with a focused x-ray beam, allowed us to gain valuable information about the nanostructure of InN-rich InGaN epilayers. It is found that “seed” InGaN mosaic nanocrystallites are twisted with respect to the ensemble average and strain-free. The initial stages of InGaN-on-GaN epitaxial growth, therefore, conform to the Volmer-Weber growth mechanism with “seeds” nucleated on strain fields generated by the a-type edge dislocations.

Item type: Article
ID code: 35790
Keywords: epitaxial growth, gallium nitride, gallium compounds, wide band gap semiconductors , TIC - Bionanotechnology, Physics, Physics and Astronomy (miscellaneous)
Subjects: Science > Physics
Department: Faculty of Science > Physics
Technology and Innovation Centre > Bionanotechnology
Technology and Innovation Centre > Photonics
Depositing user: Pure Administrator
Date Deposited: 10 Nov 2011 19:04
Last modified: 21 May 2015 14:07
Related URLs:
URI: http://strathprints.strath.ac.uk/id/eprint/35790

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