Mudryi, A. V. and Gremenok, V. F. and Karotki, A. V. and Zalesski, V. B. and Yakushev, M. V. and Luckert, F. and Martin, R. (2010) Structural and optical properties of thin films of Cu(In,Ga)Se-2 semiconductor compounds. Journal of Applied Spectroscopy, 77 (3). pp. 371-377. ISSN 0021-9037Full text not available in this repository. (Request a copy from the Strathclyde author)
The chemical composition of Cu(In,Ga)Se-2 (CIGS) semiconductor compounds is analyzed by local x-ray spectral microanalysis and scanning Auger electron spectroscopy. X-ray diffraction analysis reveals a difference in the predominant orientation of CIGS films depending on the technological conditions under which they are grown. The chemical composition is found to have a strong effect on the shift in the self-absorption edge of CIGS compounds. It is shown that a change in the relative proportion of Ga and In in CIGS semiconducting compounds leads to a change in the band gap E-g for this material in the 1.05-1.72 eV spectral range at 4.2 K.
|Keywords:||chalcopyrite semiconductors, chemical composition, absorption coefficient, x-ray diffraction analysis, structure, CUINSE2 SINGLE-CRYSTALS, SOLAR-CELLS, EPITAXIAL LAYERS, CUIN1-XGAXSE2, QUALITY, PHOTOREFLECTANCE, PERFORMANCE, EFFICIENCY, Spectroscopy, Condensed Matter Physics|
|Department:||Faculty of Science > Physics|
|Depositing user:||Pure Administrator|
|Date Deposited:||01 Nov 2011 05:22|
|Last modified:||01 Oct 2015 11:02|
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