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Weak adsorption of ethylene on GaAs(100)

Chen, Y and Schmidt, J and Siller, L and Barnard, J C and Palmer, R E and Chen, Yu (1998) Weak adsorption of ethylene on GaAs(100). Physical Review B, 58 (3). pp. 1177-1180. ISSN 1098-0121

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Abstract

Hydrocarbon molecules are an important source of carbon contamination in semiconductor growth processes. We have investigated the adsorption of ethylene, C2H4, on the As-terminated GaAs(100)surface at 100 K in ultrahigh vacuum with high-resolution electron-energy-loss spectroscopy. We find that the ethylene molecules are predominantly adsorbed weakly (physisorbed) on the surface with the C=C double bond parallel to the As surface dimers. This behavior differs significantly from the adsorption of C2H4 on Si(100), as predicted by recent theoretical calculation. When the surface temperature is increased from 100 to 300 K, some of the physisorbed C2H4 molecules convert to chemisorbed species. [S0163-1829(98)02127-4].

Item type: Article
ID code: 35394
Keywords: energy-loss spectroscopy, grown gaas, adsorption, ethylene, Solid state physics. Nanoscience, Electronic, Optical and Magnetic Materials, Condensed Matter Physics
Subjects: Science > Physics > Solid state physics. Nanoscience
Department: Faculty of Science > Physics
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 03 Nov 2011 13:53
    Last modified: 05 Sep 2014 13:10
    URI: http://strathprints.strath.ac.uk/id/eprint/35394

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