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Desorption of organic species from the GaAs (100) surface at low temperatures using low energy electron irradiation in a hydrogen ambient

Chen, Y. and Schmidt, J. and Siller, L. and Barnard, J.C. and Palmer, R.E. and Burke, T.M. and Smith, M.P. and Brown, S.J. and Ritchie, D.A. and Pepper, M. (2000) Desorption of organic species from the GaAs (100) surface at low temperatures using low energy electron irradiation in a hydrogen ambient. Applied Physics Letters, 76 (21). pp. 3034-3036. ISSN 0003-6951

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Abstract

We present a technique for the controlled removal of organic adsorbates from the GaAs (100) surface incorporating hydrogen dosing (atomic or molecular) combined with low-energy electron irradiation. High-resolution electron energy-loss and Auger electron spectroscopes verify a considerable desorption of carbon/hydrocarbons following electron irradiation at 50 eV under a hydrogen atom flux even at room temperature. At a sample temperature of 500 degrees C, static secondary ion mass spectroscopy data demonstrate selective area removal of carbon from the surface following 25 eV electron irradiation in a molecular hydrogen ambient, with a desorption rate controlled by the incident electron flux. (C) 2000 American Institute of Physics. [S0003- 6951(00)03221-6].

Item type: Article
ID code: 35391
Keywords: regrowth, quality, gallium arsenide, electron stimulated desorption, organic compounds, Physics, Physics and Astronomy (miscellaneous)
Subjects: Science > Physics
Department: Faculty of Science > Physics
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 04 Nov 2011 11:58
    Last modified: 05 Sep 2014 13:09
    URI: http://strathprints.strath.ac.uk/id/eprint/35391

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