Sun, H D and Clark, A H and Calvez, S and Dawson, M D and Qiu, Y N and Rorison, J M and Kim, K S and Kim, T and Park, Y J (2005) Spectroscopic characterization of 1.3 mu m GalnNAs quantum-well structures grown by metal-organic vapor phase epitaxy. Applied Physics Letters, 86 (9). -. ISSN 0003-6951Full text not available in this repository. (Request a copy from the Strathclyde author)
We report optical studies of high-quality 1.3 mu m strain-compensated GaInNAs/GaAs single-quantum-well structures grown by metalorganic vapor phase epitaxy. Photoluminescence excitation (PLE) spectroscopy shows clearly the electronic structure of the two-dimensional quantum well. The transition energies between quantized states of the electrons and holes are in agreement with theoretical calculations based on the band anti-crossing model in which the localized N states interact with the extended states in the conduction band. We also investigated the polarization properties of the luminescence by polarized edge-emission measurements. Luminescence bands with different polarization characters arising from the electron to heavy-hole and light-hole transitions, respectively, have been identified and verify the transition assignment observed in the PLE spectrum. (C) 2005 American Institute of Physics.
|Keywords:||GaInNAs devices, low nitrogen-content, laser-diodes, conduction band, alloys, nonparabolicity|
|Department:||Faculty of Science > Institute of Photonics|
|Depositing user:||Pure Administrator|
|Date Deposited:||18 Oct 2011 10:23|
|Last modified:||17 Jul 2013 10:55|
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