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Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents

Sun, H D and Clark, A H and Calvez, S and Dawson, M D and Shih, D K and Lin, H H (2005) Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents. Applied Physics Letters, 87 (8). -. ISSN 0003-6951

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Abstract

We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content.

Item type: Article
ID code: 33717
Keywords: single-quantum-well, laser-diodes, band-gap, GaInNAs devices, alloys, gaas, luminescence, Optics. Light
Subjects: Science > Physics > Optics. Light
Department: Faculty of Science > Institute of Photonics
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 18 Oct 2011 10:22
    Last modified: 17 Jul 2013 10:55
    URI: http://strathprints.strath.ac.uk/id/eprint/33717

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