Sun, H D and Clark, A H and Calvez, S and Dawson, M D and Shih, D K and Lin, H H (2005) Photoluminescence characterization of midinfrared InNxAs1-x/In0.53Ga0.47As/InP multiquantum wells with various N contents. Applied Physics Letters, 87 (8). -. ISSN 0003-6951Full text not available in this repository. (Request a copy from the Strathclyde author)
We report the temperature-dependent photoluminescence characterization of InNxAs1-x/In0.53Ga0.47As/InP multiple quantum wells with various N contents emitting in the midinfrared wavelength range. The emission wavelength in this material system can be tuned by the N content, but the bowing effect is much weaker than in GaNAs. The correlation between the optical properties and the interface quality is demonstrated by examining the barrier-related emission. The role played by N is elucidated by comparing quantum well samples having either zero, low (0.25%) or high (5%) N content.
|Keywords:||single-quantum-well, laser-diodes, band-gap, GaInNAs devices, alloys, gaas, luminescence, Optics. Light, Physics and Astronomy (miscellaneous)|
|Subjects:||Science > Physics > Optics. Light|
|Department:||Faculty of Science > Institute of Photonics|
|Depositing user:||Pure Administrator|
|Date Deposited:||18 Oct 2011 09:22|
|Last modified:||27 Apr 2016 17:19|