Gryczynski, K.G. and Vemuri, P.R. and Watson, Ian and Neogi, Arup (2011) Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells. Applied Physics Letters, 99 (12). ISSN 0003-6951Full text not available in this repository. (Request a copy from the Strathclyde author)
The modification in the bandgap of single GaN/InGaN quantum wells in the presence of a gold thin film with surface plasmon polariton energy off-resonant and resonant to the photoluminesnce emission energy is studied. The quantum well emission energy can be either blue shifted or red-shifted depending on the localized electric field induced by the metal thin film. A theory of electrostatic image charge induced alteration of the confinement potential is presented to explain the observed experimental shifts.
|Keywords:||energy gap, gallium compounds, gold, III-V semiconductors, indium compounds, metallic thin films, Photoluminescence, polaritons, red shift, semiconductor quantum wells, semiconductor-metal boundaries, surface plasmons, wide band gap semiconductors, Optics. Light|
|Subjects:||Science > Physics > Optics. Light|
|Department:||Faculty of Science > Institute of Photonics|
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|Depositing user:||Pure Administrator|
|Date Deposited:||17 Oct 2011 12:37|
|Last modified:||09 Jan 2014 10:58|
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