Gryczynski, K.G. and Vemuri, P.R. and Watson, Ian and Neogi, A. (2011) Influence of localized electric field on the bandedge emission of hybrid Au-GaN/InGaN quantum wells. Applied Physics Letters, 99 (12). ISSN 0003-6951
Full text not available in this repository. (Request a copy from the Strathclyde author)Official URL: http://dx.doi.org/10.1063/1.3640492
Abstract
The modification in the bandgap of single GaN/InGaN quantum wells in the presence of a gold thin film with surface plasmon polariton energy off-resonant and resonant to the photoluminesnce emission energy is studied. The quantum well emission energy can be either blue shifted or red-shifted depending on the localized electric field induced by the metal thin film. A theory of electrostatic image charge induced alteration of the confinement potential is presented to explain the observed experimental shifts.
| Item type: | Article |
|---|---|
| ID code: | 33605 |
| Keywords: | energy gap, gallium compounds, gold, III-V semiconductors, indium compounds, metallic thin films, Photoluminescence, polaritons, red shift, semiconductor quantum wells, semiconductor-metal boundaries, surface plasmons, wide band gap semiconductors, Optics. Light |
| Subjects: | Science > Physics > Optics. Light |
| Department: | Faculty of Science > Institute of Photonics ?? 122 ?? |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 17 Oct 2011 12:37 |
| Last modified: | 12 Jun 2013 16:11 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/33605 |
Actions (login required)
| View Item |