Gleskova, Helena and Wagner, S. and Shen, D. (1995) Electrophotographic patterning of a-Si:H. In: Proceeding of the second international workshop on active-matrix LCDs. Lehigh University, Bethlehem, Pennsylvania, September 25-26, 1995 . IEEE, pp. 16-19.
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on ~50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.
| Item type: | Book Section |
|---|---|
| ID code: | 33500 |
| Keywords: | electrophotographic, patterning, Si:H , amorphous silicon, thin film circuits , substrates, semiconductor thin films, printing, printers, photoconductivity , laser beam cutting , glass , etching , Electrical engineering. Electronics Nuclear engineering |
| Subjects: | Technology > Electrical engineering. Electronics Nuclear engineering |
| Department: | Faculty of Engineering > Electronic and Electrical Engineering |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 27 Sep 2011 16:52 |
| Last modified: | 04 Oct 2012 16:33 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/33500 |
Actions (login required)
| View Item |