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Electrophotographic patterning of a-Si:H

Gleskova, Helena and Wagner, S. and Shen, D. (1995) Electrophotographic patterning of a-Si:H. In: Proceeding of the second international workshop on active-matrix LCDs. IEEE, pp. 16-19.

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Abstract

We report the patterning of thin films of amorphous silicon (a-Si:H) using electrophotographically applied toner as the etch mask. Using a conventional xerographic copier, a toner pattern was applied to 0.1 μm thick a-Si:H films deposited on ~50 μm thick glass foil. The toner then served as the etch mask for a-Si:H, and as the lift-off material for the patterning of chromium. This technique opens the prospect of roll-to-roll, high-throughput patterning of large-area thin-film circuits on glass substrates.