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150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates

Gleskova, Helena and Wagner, S. and Gasparik, V. and Kovac, P. (2000) 150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates. In: Book of extended abstracts. UNSPECIFIED, Bratislava, p. 24.

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Abstract

This paper looks at 150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates