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150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates

Gleskova, Helena and Wagner, S. and Gasparik, V. and Kovac, P. (2000) 150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates. In: Book of extended abstracts. UNSPECIFIED, Bratislava, p. 24.

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Abstract

This paper looks at 150ºC silicon nitride by plasma enhanced chemical vapor deposition for amorphous silicon thin-film transistors on polyimide substrates

Item type: Book Section
ID code: 33490
Keywords: 150-degrees-C, silicon nitride , plasma enhanced, chemical vapor deposition, amorphous silicon thin-film transistors, polyimide substrates, Electrical engineering. Electronics Nuclear engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 10 Nov 2011 15:51
    Last modified: 06 Sep 2014 07:17
    URI: http://strathprints.strath.ac.uk/id/eprint/33490

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