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Short channel amorphous-silicon TFTs on high-temperature clear plastic substrates : [LED display applications]

Long, K. and Gleskova, H. and Wagner, Sigurd and Sturm, J. C. (2004) Short channel amorphous-silicon TFTs on high-temperature clear plastic substrates : [LED display applications]. In: Device Research Conference - Conference Digest, DRC. 62nd Device Research Conference, June 21-23, 2004 . IEEE, pp. 89-90. ISBN 0780382846

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Abstract

The short-channel performance of amorphous silicon-based thin film transistors (TFT) on high-temperature plastic substrate, was investigated. The TFT device structure was modified and plasma enhanced chemical vapor deposition (PECVD) was used to enhance the adhesion between the SiN x buffer and the substrate. The source-gate leakage current was smaller than 0.01 nA and it was limited by the measurement apparatus. The results show that the plastic substrates were freestanding and not mounted to rigid susbtrates for fabrication, which is critical for maintaining a clean and clear back surface for the optical devices.

Item type: Book Section
ID code: 33447
Keywords: temperature , active matrix organic light emitting diodes, displays, glass , light emitting diodes, optical device fabrication, optical devices, organic light emitting diodes, plastics, surface cleaning, Electrical engineering. Electronics Nuclear engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
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Depositing user: Pure Administrator
Date Deposited: 07 Nov 2011 14:50
Last modified: 06 May 2014 16:43
URI: http://strathprints.strath.ac.uk/id/eprint/33447

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