Caputo, D. and Bullock, J. N. and Gleskova, Helena and Wagner, S. (1994) Toward a practical model of a-Si:H defects in intensity-time-temperature space. In: Amorphous silicon technology - 1994. MRS Symposium Proceedings, 336 . Materials Research Society, Warrendale, PA, pp. 165-170. ISBN 9781558992368
Full text not available in this repository. (Request a copy from the Strathclyde author)Abstract
This chapter looks toward a practical model of a-Si:H defects in intensity-time-temperature space
| Item type: | Book Section |
|---|---|
| ID code: | 33440 |
| Keywords: | practical model, Si:H defects, intensity-time-temperature, Electrical engineering. Electronics Nuclear engineering |
| Subjects: | Technology > Electrical engineering. Electronics Nuclear engineering |
| Department: | Faculty of Engineering > Electronic and Electrical Engineering |
| Related URLs: | |
| Depositing user: | Pure Administrator |
| Date Deposited: | 04 Nov 2011 16:15 |
| Last modified: | 04 Oct 2012 16:33 |
| URI: | http://strathprints.strath.ac.uk/id/eprint/33440 |
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