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Toward a practical model of a-Si:H defects in intensity-time-temperature space

Caputo, D. and Bullock, J. N. and Gleskova, Helena and Wagner, S. (1994) Toward a practical model of a-Si:H defects in intensity-time-temperature space. [Proceedings Paper]

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Abstract

This chapter looks toward a practical model of a-Si:H defects in intensity-time-temperature space

Item type: Proceedings Paper
ID code: 33440
Keywords: practical model, Si:H defects, intensity-time-temperature, Electrical engineering. Electronics Nuclear engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 04 Nov 2011 16:15
    Last modified: 17 Jul 2013 13:52
    URI: http://strathprints.strath.ac.uk/id/eprint/33440

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