Strathprints logo
Strathprints Home | Open Access | Browse | Search | User area | Copyright | Help | Library Home | SUPrimo

Toward a practical model of a-Si:H defects in intensity-time-temperature space

Caputo, D. and Bullock, J. N. and Gleskova, Helena and Wagner, S. (1994) Toward a practical model of a-Si:H defects in intensity-time-temperature space. In: Amorphous silicon technology - 1994. MRS Symposium Proceedings, 336 . Materials Research Society, Warrendale, PA, pp. 165-170. ISBN 9781558992368

Full text not available in this repository. (Request a copy from the Strathclyde author)

Abstract

This chapter looks toward a practical model of a-Si:H defects in intensity-time-temperature space

Item type: Book Section
ID code: 33440
Keywords: practical model, Si:H defects, intensity-time-temperature, Electrical engineering. Electronics Nuclear engineering
Subjects: Technology > Electrical engineering. Electronics Nuclear engineering
Department: Faculty of Engineering > Electronic and Electrical Engineering
Related URLs:
    Depositing user: Pure Administrator
    Date Deposited: 04 Nov 2011 16:15
    Last modified: 06 Sep 2014 07:14
    URI: http://strathprints.strath.ac.uk/id/eprint/33440

    Actions (login required)

    View Item